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IXTB30N100L

MOSFET 30 Amps 1000V

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SeekIC No. : 00158321 Detail

IXTB30N100L: MOSFET 30 Amps 1000V

IXTB30N100L Data Sheet

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Part Number:
IXTB30N100L
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.45 Ohms


Parameters:

Technical/Catalog InformationIXTB30N100L
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds 13200pF @ 25V
Power - Max800W
PackagingTube
Gate Charge (Qg) @ Vgs545nC @ 20V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTB30N100L
IXTB30N100L



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