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IXTC26N50P

MOSFET 14.0 Amps 500 V 0.26 Ohm Rds

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SeekIC No. : 00154531 Detail

IXTC26N50P: MOSFET 14.0 Amps 500 V 0.26 Ohm Rds

IXTC26N50P Data Sheet

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Part Number:
IXTC26N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.26 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.26 Ohms
Package / Case : ISOPLUS 220


Features:

Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
Low drain to tab capacitance(<30pF)


Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control


Parameters:

Technical/Catalog InformationIXTC26N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs260 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max130W
PackagingTube
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTC26N50P
IXTC26N50P



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