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IXTJ36N20

MOSFET 36 Amps 200 V 0.07 W Rds

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SeekIC No. : 00164403 Detail

IXTJ36N20: MOSFET 36 Amps 200 V 0.07 W Rds

IXTJ36N20 Data Sheet

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Part Number:
IXTJ36N20
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 36 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.07 Ohms


Parameters:

Technical/Catalog InformationIXTJ36N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs70 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2970pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTJ36N20
IXTJ36N20



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