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IXTK170N10P

MOSFET 170 Amps 100V 0.009 Ohm Rds

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SeekIC No. : 00154419 Detail

IXTK170N10P: MOSFET 170 Amps 100V 0.009 Ohm Rds

IXTK170N10P Data Sheet

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Part Number:
IXTK170N10P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 170 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-264
Resistance Drain-Source RDS (on) : 0.009 Ohms
Continuous Drain Current : 170 A


Parameters:

Technical/Catalog InformationIXTK170N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C170A
Rds On (Max) @ Id, Vgs9 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max714W
PackagingTube
Gate Charge (Qg) @ Vgs198nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK170N10P
IXTK170N10P



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