MOSFET -170.0 Amps -100V 0.012 Rds
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 170 A | ||
Resistance Drain-Source RDS (on) : | 12 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264 | Packaging : | Tube |
Technical/Catalog Information | IXTK170P10P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 170A |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 12600pF @ 25V |
Power - Max | 890W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 240nC @ 10V |
Package / Case | TO-264 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTK170P10P IXTK170P10P |