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IXTK180N15

MOSFET 180 Amps 150V 0.01 Rds

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SeekIC No. : 00159139 Detail

IXTK180N15: MOSFET 180 Amps 150V 0.01 Rds

IXTK180N15 Data Sheet

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Part Number:
IXTK180N15
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.009 Ohms
Package / Case : TO-264AA


Features:

• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times


Application

• Motor controls
• DC choppers
• Switched-mode power supplies


Specifications

Symbol
Test conditions
Maximum
ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
180
75
720
90
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
64
3.0
mJ
J
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5
V/ns
PD
TC = 25°C
560
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mounting torque
0.7/6
Nm/lb.in.
Weight
TO-264
10
g



Parameters:

Technical/Catalog InformationIXTK180N15
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max800W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK180N15
IXTK180N15



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