Position: Home  > All Categories> Integrated Circuits (ICs) > IXTK21N100

IXTK21N100

MOSFET 21 Amps 100V 0.55 Ohm Rds

product image

IXTK21N100 Picture
See larger image
SeekIC No. : 00151090 Detail

IXTK21N100: MOSFET 21 Amps 100V 0.55 Ohm Rds

IXTK21N100 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTK21N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.55 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-264AA


Features:

·International standard packages JEDEC TO-264, epoxy meet UL 94 V-0
·flammability classification
·miniBLOC, (ISOTOP-compatible) with
·Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
IXTK IXTN
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000		 1000
1000		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 ±20
±30		 V
V
ID25
IDM		 21
84		 21
84		 21
84		 A
A
PD TC = 25°C 500 500 w
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in) from case for 10 s 300 - °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s		 -
-		 2500
3000		 V~
V~
Md Mounting torque
Terminal connection torque		 0.9/6
-		 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in..
Weight   10 30 g



Parameters:

Technical/Catalog InformationIXTK21N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs550 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK21N100
IXTK21N100



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Test Equipment
TOP853
TOP2005
Memory Cards, Modules
WT32
VTL5C7
Line Protection, Backups
BX0023
A20B-1008-0550
View more