Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET
IXTK600N04T2: Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET
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Product : | MOSFET Gate Drivers | Type : | TrenchT2 GigaMOS | ||
Rise Time : | 20 ns | Fall Time : | 250 ns | ||
Supply Current : | 200 A | Maximum Power Dissipation : | 1250 W | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264 | Packaging : | Tube |