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IXTK62N25

MOSFET 62 Amps 250V 0.035 Rds

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SeekIC No. : 00159092 Detail

IXTK62N25: MOSFET 62 Amps 250V 0.035 Rds

IXTK62N25 Data Sheet

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Part Number:
IXTK62N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 62 A
Package / Case : TO-264
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times


Application

• Motor controls
• DC choppers
• Switched-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ		 250
250		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
IAR		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms		 62
248
62		 A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C		 45
1.5		 mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 5 V/ns
PD TC = 25°C 390 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300  
Md Mounting torque 0.7/6 Nm/lb.in.
Weight TO-264 10 g



Parameters:

Technical/Catalog InformationIXTK62N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs35 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max390W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK62N25
IXTK62N25



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