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IXTN22N100L

MOSFET 22 Amps 1000V

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SeekIC No. : 00158260 Detail

IXTN22N100L: MOSFET 22 Amps 1000V

IXTN22N100L Data Sheet

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Part Number:
IXTN22N100L
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 24 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.6 Ohms


Parameters:

Technical/Catalog InformationIXTN22N100L
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs600 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds 7050pF @ 25V
Power - Max700W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 15V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTN22N100L
IXTN22N100L



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