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IXTN30N100L

MOSFET 30 Amps 1000V

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SeekIC No. : 00151202 Detail

IXTN30N100L: MOSFET 30 Amps 1000V

IXTN30N100L Data Sheet

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Part Number:
IXTN30N100L
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Configuration : Single Dual Source
Drain-Source Breakdown Voltage : 1000 V
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.45 Ohms


Parameters:

Technical/Catalog InformationIXTN30N100L
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds 13700pF @ 25V
Power - Max800W
PackagingBulk
Gate Charge (Qg) @ Vgs545nC @ 20V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Other Names IXTN30N100L
IXTN30N100L



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