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IXTN40P50P

MOSFET -40.0 Amps -500V 0.230 Rds

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SeekIC No. : 00151001 Detail

IXTN40P50P: MOSFET -40.0 Amps -500V 0.230 Rds

IXTN40P50P Data Sheet

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Part Number:
IXTN40P50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 40 A
Resistance Drain-Source RDS (on) : 230 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOT-227
Drain-Source Breakdown Voltage : - 500 V
Continuous Drain Current : - 40 A
Resistance Drain-Source RDS (on) : 230 mOhms


Parameters:

Technical/Catalog InformationIXTN40P50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 11500pF @ 25V
Power - Max890W
PackagingTube
Gate Charge (Qg) @ Vgs205nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTN40P50P
IXTN40P50P



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