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IXTQ280N055T

MOSFET 280 Amps 55V 2.8 Rds

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SeekIC No. : 00153956 Detail

IXTQ280N055T: MOSFET 280 Amps 55V 2.8 Rds

IXTQ280N055T Data Sheet

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Part Number:
IXTQ280N055T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 280 A Resistance Drain-Source RDS (on) : 0.0032 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.0032 Ohms
Continuous Drain Current : 280 A


Parameters:

Technical/Catalog InformationIXTQ280N055T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C280A
Rds On (Max) @ Id, Vgs3.2 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9700pF @ 25V
Power - Max550W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ280N055T
IXTQ280N055T



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