MOSFET 24 Amps 500V 0.23 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 28 A | ||
| Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-268 | Packaging : | Bulk |
| Technical/Catalog Information | IXTT28N50Q |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 28A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 3300pF @ 25V |
| Power - Max | 400W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 94nC @ 10V |
| Package / Case | TO-268 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTT28N50Q IXTT28N50Q |