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IXTT50P10

MOSFET -50 Amps -100V 0.055 Rds

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SeekIC No. : 00153831 Detail

IXTT50P10: MOSFET -50 Amps -100V 0.055 Rds

IXTT50P10 Data Sheet

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Part Number:
IXTT50P10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 50 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-268
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.055 Ohms
Continuous Drain Current : - 50 A


Parameters:

Technical/Catalog InformationIXTT50P10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs55 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTT50P10
IXTT50P10



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