Position: Home  > All Categories> Integrated Circuits (ICs) > IXTU02N50D

IXTU02N50D

MOSFET 0.2 Amps 500V 30 Rds

product image

IXTU02N50D Picture
See larger image
SeekIC No. : 00150914 Detail

IXTU02N50D: MOSFET 0.2 Amps 500V 30 Rds

IXTU02N50D Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTU02N50D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 30000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-251AA-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 0.2 A
Package / Case : TO-251AA-3
Resistance Drain-Source RDS (on) : 30000 mOhms


Features:

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed


Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators


Specifications

Symbol
Conditions
Ratings
VDSX
VDGX
 TJ = 25 to 150
TJ = 25 to 150
500 V
500 V
VGS
VGSM
 Continuous
Transient
± 20 V
± 30 V
IDSS
IDM
 TC = 25; TJ = 25 to 150
TC = 25, pulse width limited by TJ
200 mA
800 mA
PD
 TC = 25
T = 25
25 W
1.1 W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150
TL
TISOL
 1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
300
300
Md
 Mounting torque TO-220
1.3 / 10 Nm/lb.
Weight
 TO-220
TO-251
TO-252
4 g
0.8 g
0.8 g



Parameters:

Technical/Catalog InformationIXTU02N50D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs30 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1.1W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU02N50D
IXTU02N50D



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Switches
US32DMRJ
HBGQ22P-11ET
Kits
IT243
UVSC-110-4E1
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Resistors
A101G
3006P-1-205LF
Memory Cards, Modules
WT32
VTL5C7
View more