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IXTU1R4N60P

MOSFET 1.4 Amps 600V 9.0 Ohms Rds

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SeekIC No. : 00164394 Detail

IXTU1R4N60P: MOSFET 1.4 Amps 600V 9.0 Ohms Rds

IXTU1R4N60P Data Sheet

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Part Number:
IXTU1R4N60P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 1.4 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 9 Ohms


Parameters:

Technical/Catalog InformationIXTU1R4N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.4A
Rds On (Max) @ Id, Vgs9 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs5.2nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU1R4N60P
IXTU1R4N60P



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