Position: Home  > All Categories> Integrated Circuits (ICs) > IXTY01N80

IXTY01N80

MOSFET 0.1 Amps 800V 50 Rds

product image

IXTY01N80 Picture
See larger image
SeekIC No. : 00164476 Detail

IXTY01N80: MOSFET 0.1 Amps 800V 50 Rds

IXTY01N80 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTY01N80
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/1

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 50 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.1 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 50 Ohms


Features:

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times


Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 800
800		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 100
400		 A
A
PD TC = 25°C 25 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Weight   0.8 g



Parameters:

Technical/Catalog InformationIXTY01N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs50 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY01N80
IXTY01N80



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Switches
US32DMRJ
HBGQ22P-11ET
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more