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IXTY08N100P

MOSFET 0.8 Amps 1000V 20 Rds

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SeekIC No. : 00154080 Detail

IXTY08N100P: MOSFET 0.8 Amps 1000V 20 Rds

IXTY08N100P Data Sheet

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Part Number:
IXTY08N100P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.8 A
Resistance Drain-Source RDS (on) : 20 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-252
Drain-Source Breakdown Voltage : 1000 V
Continuous Drain Current : 0.8 A
Resistance Drain-Source RDS (on) : 20 Ohms


Parameters:

Technical/Catalog InformationIXTY08N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C800mA
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs11.3nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY08N100P
IXTY08N100P



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