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J110G

JFET 25V 10mA

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SeekIC No. : 00144646 Detail

J110G: JFET 25V 10mA

J110G Data Sheet

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Part Number:
J110G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain Current (Idss at Vgs=0) : 10 mA
Gate-Source Breakdown Voltage : 25 V Configuration : Single
Mounting Style : Through Hole Package / Case : TO-92-3
Packaging : Bulk    

Description

Drain Source Voltage VDS :
Continuous Drain Current :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 25 V
Packaging : Bulk
Drain Current (Idss at Vgs=0) : 10 mA
Package / Case : TO-92-3


Features:

• N−Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low RDS(on) < 18
• Fast Switching td(on) + tr = 8.0 ns (Typ)
• Low Noise en = 6.0 nV/Hz @ 10 Hz (Typ)
• Pb−Free Packages are Available*


Specifications

Rating Symbol Value Unit
Gate−Source Voltage VGS -25 Vdc
Drain−Gate Voltage VDG -25 Vdc
Gate Current IG 10 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C		 PD 310
2.82		 mW
mW/°C
Operating Junction Temp Range TJ 135
Storage Temperature Range Tstg −65 to +150



Parameters:

Technical/Catalog InformationJ110G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)10mA @ 15V
Gate to Source Voltage (Vgs Max)*
Input Capacitance (Ciss) @ Vds -
Power - Max310mW
PackagingBulk
Package / CaseTO-92-3, TO-226AA (Straight Leads)
Voltage - Cutoff (VGS off) @ Id500mV @ 1A
Voltage - Breakdown (V(BR)GSS)25V
Resistance - RDS(On)18 Ohm
Current Drain (Id) - Max-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names J110G
J110G



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