JANS2N3019

The JANS2N3019 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-19500/472 .

The absolute maximum ratings of the JANS2N3019 can be summarized as:(1)Collector-Emitter Voltage :80V; (2)Collector-Base Voltage :140V; (3)Emitter-Base Voltage :7.0V; (4)Collector Current  :1.0V; (5)Total Power Dissipation@ T  = +25:0.8W; (6)@ TC = +25:5.0W; (7)Operating & Storage Jct Temp Range: -55 to +175.     

The electrical characteristics at TA=25°C(unless otherwise specified) of the JANS2N3019 can be summarized as:(1)Collector-Base Breakdown Voltage IC = 100 mAdc:140V; (2)Emitter-Base Breakdown Voltage  IE = 100 mAdc:7.0V; (3)Collector-Emitter Breakdown Current IC = 30 mAdc :80V; (4)Collector-Emitter Cutoff Current VCE = 90 Vdc :10hAdc ; (5)Emitter-Base Cutoff CurrentVEB  = 5.0 Vdc :10hAdc ; (6)Forward-Current Transfer RatioIC = 150 mAdc, VCE = 10 Vdc:100~300 ; (7)   IC = 0.1 mAdc, VCE = 10 Vdc :50~200; (8)   IC = 10 mAdc, VCE = 10 Vdc :90; (9)   IC = 500 mAdc, VCE = 10 Vdc :50~200; (10)   IC = 1.0 Adc, VCE = 10 Vdc 15; (11)Collector-Emitter Saturation VoltageIC = 150 mAdc, IB = 15 mAdc :0.2V; (12)   IC = 500 mAdc, IB = 50 mAdc:0.5V; (13) Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc :1.1V.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .