JANSR2N7381

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25V Continuous Drain Current 9.4...

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SeekIC No. : 004381938 Detail

JANSR2N7381: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Light Weigh...

floor Price/Ceiling Price

Part Number:
JANSR2N7381
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25V Continuous Drain Current 9.4 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 6.0
IDM Pulsed Drain Current 37
PD @ TC = 25 Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 5.5 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 16 V/ns
TJ
TSTG
Operating JunctionStorage Temperature Range -55 to 150
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight 7.0 (Typical) g



Description

International Rectifier JANSR2N7381's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology JANSR2N7381 has over a decade of proven performance and reliability in satellite applications. These devices JANSR2N7381 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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