MFG:IR Package Cooled:TO-254AA D/C:05+
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
Description: International Rectifier's RAD-HardTM HEXFET® MOSFET technology provides high performance power MOS...
International Rectifier's RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25 | Continuous Drain Current | -27 | A |
| ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -17 | |
| IDM | Pulsed Drain Current | -108 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | -27 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -9.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
JANSR2N7426
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International Rectifier's RAD-Hard HEXFET® technology JANSR2N7423 provides high performance power MOSFETs for space applications. This technology JANSR2N7423 has over a decade of proven performance and reliability in satellite applications. These devices...
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