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Part Number: JANSR2N7439
Description: The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened M...
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JANSR2N7439
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General Description
JANSR2N7439 General Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
JANSR2N7439 Maximum Ratings
| Drain to Source Voltage | VDS | -200 | V |
| Drain to Gate Voltage (RGS = 20W) | VDGR | -200 | V |
| Continuous Drain Current TC = 25oC |
ID | 5 | A |
| TC = 100oC. | ID | 3 | A |
| Pulsed Drain Current | IDM | 15 | A |
| Pulsed Drain Current | VGS | ±20 | V |
| Maximum Power Dissipation TC = 25oC |
PT | 25 | W |
| TC = 100oC | PT | 10 | W |
| Linear Derating Factor | 0.20 | W/oC | |
| Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) | IAS | 15 | A |
| Continuous Source Current (Body Diode) | IS | 5 | A |
| Pulsed Source Current (Body Diode) | ISM | 15 | A |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Lead Temperature (During Soldering) | TL | 300 | |
| (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) |
1.0 | g |
JANSR2N7439 Features
• 5A, -200V, rDS(ON) = 0.670W
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
JANSR2N7439
PDF/DataSheet Download
- Datasheet: JANSR2N7439
- File Size: 59526 KB
- Manufacturer: Intersil
- Click here to Download
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