JANSR2N7485U3

Features:

Single Event Effect (SEE) Hardened
Ultra Low R_DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight


Specifications

	Parameter		Units
ID @ VGS = 12V, TC = 25°C	Continuous Drain Current	20	A
ID @ VGS = 12V, TC = 100°C	Continuous Drain Current	12.5
IDM	Pulsed Drain Current	80
PD @ TC = 25°C	Max. Power Dissipation	75	W
	Linear Derating Factor	0.6	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	65	mJ
IAR	Avalanche Current	20	A
EAR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	7.7	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150	°C
	Pckg. Mounting Surface Temp.	300 (for 5s)
	Weight	1.0(Typical)	g

Description

International Rectifier's R5TM technology JANSR2N7485U3 provides high performance power MOSFETs for space applications. These devices JANSR2N7485U3 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R_DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.