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JANSR2N7497T2

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter Units ID @ ...

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SeekIC No. : 004381977 Detail

JANSR2N7497T2: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements·...

JANSR2N7497T2 Data Sheet

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Part Number:
JANSR2N7497T2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed




Specifications

 
Parameter
Units
ID @ VGS = 12V,TC = 25°C
 Continuous Drain Current
10.5
A
ID @ VGS = 12V,TC = 100°C
 Continuous Drain Current
6.5
A
IDM
 Pulsed Drain Current 1
42
A
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy 2
164
mJ
IAR
 Avalanche Current 1
10.5
A
EAR
 Repetitive Avalanche Energy 1
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt 3
8.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
°C
  Lead Temperature
300 (0.063 in./1.6mm from case for 10s)
°C
  Weight
0.98 (Typical)
g



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