Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter Units ID @ ...
JANSR2N7497T2: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements·...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
Parameter |
Units | ||
ID @ VGS = 12V,TC = 25°C |
Continuous Drain Current |
10.5 |
A |
ID @ VGS = 12V,TC = 100°C |
Continuous Drain Current |
6.5 |
A |
IDM |
Pulsed Drain Current 1 |
42 |
A |
PD @ TC = 25°C |
Max. Power Dissipation |
25 |
W |
Linear Derating Factor |
0.2 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy 2 |
164 |
mJ |
IAR |
Avalanche Current 1 |
10.5 |
A |
EAR |
Repetitive Avalanche Energy 1 |
2.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt 3 |
8.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
°C |
Lead Temperature |
300 (0.063 in./1.6mm from case for 10s) |
°C | |
Weight |
0.98 (Typical) |
g |