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JANSR2N7498T2

Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of Paralleling·Hermetically SealedSpecifications Parameter Units ID @ V...

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SeekIC No. : 004381978 Detail

JANSR2N7498T2: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Re...

JANSR2N7498T2 Data Sheet

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Part Number:
JANSR2N7498T2
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 7.0 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 4.5
IDM Pulsed Drain Current 28
PD @ TC = 25 Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 7.0 A
EAR Repetitive Avalanche Energy 2.5 mJ
dv/dt Peak Diode Recovery dv/dt 4.2 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g



Description

International Rectifier's R5TM technology JANSR2N7498T2 provides high performance power MOSFETs for space applications. These devices JANSR2N7498T2 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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