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JANSR2N7499T2

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter Units ID @ V...

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SeekIC No. : 004381979 Detail

JANSR2N7499T2: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· ...

JANSR2N7499T2 Data Sheet

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Part Number:
JANSR2N7499T2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain Current
5.2
A
ID @ VGS = 12V, TC = 100
 Continuous Drain Current
3.3
IDM
 Pulsed Drain Current
20.8
PD @ TC = 25
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
142
mJ
IAR
 Avalanche Current
5.2
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.8
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 ( 0.063 in./1.6mm from case for 10s)
Weight
0.98(Typical)
9




Description

International Rectifier's R5TM technology JANSR2N7499T2 provides high performance power MOSFETs for space applications. These devices JANSR2N7499T2 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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