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Part Number: JANSR2N7499T2

 

 

 

 

Description: International Rectifier's R5TM technology provides high performance power MOSFETs for space...


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JANSR2N7499T2 General Description


International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

JANSR2N7499T2 Maximum Ratings

Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
5.2
A
ID @ VGS = 12V, TC = 100
Continuous Drain Current
3.3
IDM
Pulsed Drain Current
20.8
PD @ TC = 25
Max. Power Dissipation
25
W
Linear Derating Factor
0.2
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
142
mJ
IAR
Avalanche Current
5.2
A
EAR
Repetitive Avalanche Energy
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt
6.8
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 ( 0.063 in./1.6mm from case for 10s)
Weight
0.98(Typical)
9

JANSR2N7499T2 Features

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed

JANSR2N7499T2 datasheet

JANSR2N7499T2
PDF/DataSheet Download

  • Datasheet: JANSR2N7499T2
  • File Size: 190572 KB
  • Manufacturer: IRF [International Rectifier]
  • Click here to Download

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