Purchase JANSR2N7499T2, In-stock JANSR2N7499T2 From SeekIC.


Part Number: JANSR2N7499T2
Description: International Rectifier's R5TM technology provides high performance power MOSFETs for space...


Description: International Rectifier's R5TM technology provides high performance power MOSFETs for space...
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
|
Parameter |
Units | ||
|
ID @ VGS = 12V, TC = 25 |
Continuous Drain Current |
5.2 |
A |
|
ID @ VGS = 12V, TC = 100 |
Continuous Drain Current |
3.3 | |
|
IDM |
Pulsed Drain Current |
20.8 | |
|
PD @ TC = 25 |
Max. Power Dissipation |
25 |
W |
| Linear Derating Factor |
0.2 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
142 |
mJ |
|
IAR |
Avalanche Current |
5.2 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
6.8 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 ( 0.063 in./1.6mm from case for 10s) |
||
| Weight |
0.98(Typical) |
9 |
JANSR2N7499T2
PDF/DataSheet Download








