DescriptionThe JANTX2N6350 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-19500/472 . The absolute maximum ratings of the JANTX2N6350 can be summarized as:(1)Collector-Emitter Voltage :80V; (2)Collector-Base Voltage :80V; (3)Emitter-Base Voltage :12V;6.0V; (4)Base Current :0....
JANTX2N6350: DescriptionThe JANTX2N6350 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-19500/472 . The absolute maximum ratings of the JANTX2N6350 can be summarized as:(1)Collector-Emitter ...
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The JANTX2N6350 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-19500/472 .
The absolute maximum ratings of the JANTX2N6350 can be summarized as:(1)Collector-Emitter Voltage :80V; (2)Collector-Base Voltage :80V; (3)Emitter-Base Voltage :12V;6.0V; (4)Base Current :0.5A; (5)Collector Current :5.0A; (6)Total Power Dissipation@ TA = 250C:1.0W ; (7) @ TC = 1000C :5.0W; (8)Operating & Storage Junction Temperature Range: -65~200.
The electrical characteristics at TA=25°C(unless otherwise specified) of the JANTX2N6350 can be summarized as:(1)Thermal Resistance, Junction-to-Case:20/W; (2)Collector-Emitter Breakdown Voltage Ic = 25 mAdc, RBIE= 2.2 k, RB2E= 100:80V; (3)Emitter-Base Breakdown Voltage IEB = 12 mAdc, Base 1 Open: ; (4)6.0A.IEB = 12 mAdc, Base 2 Open :12V; (5)Collector-Emitter Cutoff Current VEB1 = 2.0 Vdc, RB2E = 100 W, VCE = 80 Vdc:1.0 mAdc; (6) IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 :2,000; (7)IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100:2,000; (8) IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100:400; (9)Collector-Emitter Saturation Voltage IC = 5.0 Adc, RB2E = 100 W, IB1 = 5.0 mAdc :1.5V; (10)Base-Emitter Voltage IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 W :2.5V.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .