JANTXV2N3715

The JANTXV2N3715 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N3715 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(2)Collector-Base Voltage: 80 Vdc;(3)Emitter-Base Voltage: 7.0 Vdc;(4)Base Current: 4.0 Adc;(5)Collector Current: 10 Adc;(6)Total Power Dissipation @ TA = 25: 5.0 W;(7)Total Power Dissipation @ TA = 100: 85.7 W;(8)Operating & Storage Junction Temperature Range: -65 to +200 .

And the electrical characteristics (Tc=25 unless otherwise noted) of the JANTXV2N3715 can be summarized as:(1)Collector-Emitter Breakdown Current: 60 Vdc;(2)Collector-Base Cutoff Current: 10 uAdc;(3)Emitter-Base Breakdown Voltage: 1.0 mAdc;(4)Collector-Emitter Cutoff Current: 1.0 mAdc;(5)Collector-Emitter Cutoff Current: 1.0 mAdc. If you want to know more information such as the electrical characteristics about the JANTXV2N3715, please download the datasheet in www.seekic.com or www.chinaicmart.com.