JANTXV2N5660

The JANTXV2N5660 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5660 can be summarized as:(1)Collector-Emitter Voltage: 200 Vdc;(2)Collector-Base Voltage: 300 Vdc;(3)Emitter-Base Voltage: 10.0 Vdc;(4)Collector Current: 20 Adc;(5)Total Power Dissipation @ TA = 25: 4.0 W;(6)Total Power Dissipation @ TA = 100: 150 W;(7)Operating & Storage Junction Temperature Range: -65 to +200 .

And the electrical characteristics (Tc=25 unless otherwise noted) of the JANTXV2N5660 can be summarized as:(1)Collector-Emitter Breakdown Current: 200 Vdc;(2)Collector-Base Cutoff Current: 250 uAdc;(3)Emitter-Base Breakdown Voltage: 2.0 mAdc;(4)Collector-Emitter Cutoff Current: 5.0 mAdc;(5)Collector-Emitter Cutoff Current: 5.0 mAdc. If you want to know more information such as the electrical characteristics about the JANTXV2N5660, please download the datasheet in www.seekic.com or www.chinaicmart.com.