JANTXV2N5671

The JANTXV2N5671 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5671 can be summarized as:(1)Collector-Emitter Voltage: 90 Vdc;(2)Collector-Base Voltage: 120 Vdc;(3)Emitter-Base Voltage: 7.0 Vdc;(4)Collector Current: 10 Adc;(5)Total Power Dissipation @ TA = 25: 6.0 W;(6)Total Power Dissipation @ TA = 100: 140 W;(7)Operating & Storage Junction Temperature Range: -65 to +200 .

And the electrical characteristics (Tc=25 unless otherwise noted) of the JANTXV2N5671 can be summarized as:(1)Collector-Emitter Breakdown Current: 90 Vdc;(2)Collector-Emitter Breakdown Voltage: 110 Vdc;(3)Collector-Emitter Breakdown Voltage: 120 Vdc;(4)Collector-Emitter Cutoff Current: 10 mAdc;(5)Collector-Base Cutoff Current: 25 mAdc;(6)Emitter-Base Cutoff Current: 10 mAdc. If you want to know more information such as the electrical characteristics about the JANTXV2N5671, please download the datasheet in www.seekic.com or www.chinaicmart.com.