JANTXV2N5683

The JANTXV2N5683 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(2)Collector-Base Voltage: 60 Vdc;(3)Emitter-Base Voltage: 5.0 Vdc;(4)Collector Current: 15 Adc;(5)Total Power Dissipation @ TA = 25: 300 W;(6)Total Power Dissipation @ TA = 100: 171 W;(7)Operating & Storage Junction Temperature Range: -65 to +200 .

And the electrical characteristics (Tc=25 unless otherwise noted) of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Breakdown Current: 60 Vdc;(2)Collector-Emitter Cutoff Current: 5.0 uAdc;(3)Collector-Base Cutoff Current: 5.0 uAdc;(4)Emitter-Base Cutoff Current: 5.0 uAdc;(5)Turn-Off Time: 3.0 us;(6)Turn-On Time: 1.5 us. If you want to know more information such as the electrical characteristics about the JANTXV2N5683, please download the datasheet in www.seekic.com or www.chinaicmart.com.