Purchase JANTXV2N5795, In-stock JANTXV2N5795 From SeekIC.
Part Number: JANTXV2N5795
Description: The JANTXV2N5795.This specification is approved for use by all Departments and Agencies of the Departm...
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JANTXV2N5795
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General Description
JANTXV2N5795 General Description
The JANTXV2N5795.This specification is approved for use by all Departments and Agencies of the Department of Defense. This specification covers the performance requirements for two electrically isolated, unmatched PNP silicon transistors as one dual unit for HI-speed saturated switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Feature of the JANTXV2N5795 is:(1)For TA 25°C, Derate linearly 2.86 mW/°C one section, 3.43 mW/°C total.
The absolute maximum ratings of the JANTXV2N5795 can be summarized as:(1)PT 1/TA = +25°C:0.5W(one section);0.6W(one section); (2)IC:600mA; (3)VCBO:60V; (4)VCEO:60V; (5)VEBO:5.0V; (6)TJ and TSTG:-65~175°C.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.
JANTXV2N5795
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- Datasheet: JANTXV2N5795
- File Size: 91489 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
- ·JAN-03
- VISAY [Vishay Siliconix]
- Basic Definitions
- 105367 KB
- ·JAN109T
- MICROSEMI [Microsemi Corporation]
- 5 -VOLT FIXED VOLTAGE REGULATORS
- 51727 KB
- ·JAN117K
- MICROSEMI [Microsemi Corporation]
- 1.5 AMP THREE TERMINAL ADJUSTABLE VOLTAGE REGULATOR
- 219944 KB
- ·JAN117T
- MICROSEMI [Microsemi Corporation]
- 1.5 AMP THREE TERMINAL ADJUSTABLE VOLTAGE REGULATOR
- 219944 KB
- ·JAN1524J
- MICROSEMI [Microsemi Corporation]
- REGULATING PULSE WIDTH MODULATOR
- 84707 KB
- ·JAN1525AJ
- MICROSEMI [Microsemi Corporation]
- REGULATING PULSE WIDTH MODULATOR
- 139064 KB
- ·JAN1526BJ
- MICROSEMI [Microsemi Corporation]
- REGULATING PULSE WIDTH MODULATOR
- 214338 KB
- ·JAN1527AJ
- MICROSEMI [Microsemi Corporation]
- REGULATING PULSE WIDTH MODULATOR
- 139064 KB
JANTXV2N5795 Relative Products
JANTXV2N5683
The JANTXV2N5683 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(2)Collector-Base Voltage: 60 Vdc;(3)Emitter-Base Voltage: 5.0 Vdc;(4)Co...
JANTXV2N5671
The JANTXV2N5671 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5671 can be summarized as:(1)Collector-Emitter Voltage: 90 Vdc;(2)Collector-Base Voltage: 120 Vdc;(3)Emitter-Base Voltage: 7.0 Vdc;(4)C...
JANTXV2N5660
The JANTXV2N5660 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5660 can be summarized as:(1)Collector-Emitter Voltage: 200 Vdc;(2)Collector-Base Voltage: 300 Vdc;(3)Emitter-Base Voltage: 10.0 Vdc;(4...
JANTXV2N5152
The JANTXV2N5152.This specification is approved for use by all Departments and Agencies of the Department of Defense.This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications...
JANTXV2N3846
The JANTXV2N3846 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N3846 can be summarized as:(1)Collector-Emitter Voltage: 200 Vdc;(2)Collector-Base Voltage: 300 Vdc;(3)Emitter-Base Voltage: 10.0 Vdc;(4...
JANTXV2N3766
The JANTXV2N3766.This specification is approved for use by all Departments and Agencies of the Department of Defense.This specification covers the performance requirements for NPN silicon,power transistors. Three levels of product assurance are provided for ...
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