JANTXV2N5795

The JANTXV2N5795.This specification is approved for use by all Departments and Agencies of the Department of Defense. This specification covers the performance requirements for two electrically isolated, unmatched PNP silicon transistors as one dual unit for HI-speed saturated switching applications.  Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Feature of the JANTXV2N5795 is:(1)For TA 25°C, Derate linearly 2.86 mW/°C one section, 3.43 mW/°C total.

The absolute maximum ratings of the JANTXV2N5795 can be summarized as:(1)PT  1/TA = +25°C:0.5W(one section);0.6W(one section); (2)IC:600mA; (3)VCBO:60V; (4)VCEO:60V; (5)VEBO:5.0V; (6)TJ and TSTG:-65~175°C.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.