Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanche Energy ➁ 0.31 mJ VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous D...
JANTXV2N6802U: Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanc...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter | Max. | Units | |
| EAS | Single Pulse Avalanche Energy ➁ | 0.31 | mJ |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 2.5 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 1.5 | A |
| IDM | Pulsed Drain Current | 11 | A |
| PD @TC = 25°C | Power Power Dissipation | 25 | W |
| Linear Derating Factor | 0.20 | W/K | |
| dv/dt | Peak Diode Recovery dv/dt | 6.2 | V/nS |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
| Surface Temperature | 300 ( for 5 seconds) | °C | |
| Weight | 0.42 (typical) | g |