JANTXV2N6804

Features:

·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling


Specifications

	Parameter		Units
ID @ VGS = 0V, TC = 25	Continuous Drain Current	-11	A
ID @ VGS = 0V, TC = 100	Continuous Drain Current	-7.0
IDM	Pulsed Drain Current ➀	-50
PD @ TC = 25	Max. Power Dissipation	75	W
	Linear Derating Factor	0.60	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy ➁	81	mJ
IAR	Avalanche Current ➀	-11	A
EAR	Repetitive Avalanche Energy ➀	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt ➂	-5.5	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s)
	Weight	11.5 (typical)	g

Description

The HEXFETtechnology JANTXV2N6804 is the key to International Rectifier's advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors JANTXV2N6804 also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

The JANTXV2N6804 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.