JS28F256P30TFA

Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Interface: Parallel
Packaging: Tray
Memory Size: 256M (16Mx16)
Manufacturer: Micron Technology Inc
Memory Type: FLASH - Nor
Series: Axcell™
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Voltage - Supply: 1.7 V ~ 2 V
Speed: 110ns
Supplier Device Package: 56-TSOP (18.4x14)


Description

The JS28F256P30TFA is designed as one kind of Intel strataflash embedded memory that is manufactured using Intel® 130 nm ETOX™ VIII process technology. The benefits of this device are more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage.

Features of the JS28F256P30TFA are:(1)85/88 ns initial access;(2)40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode;(3)25 ns asynchronous-page read mode;(4)4-, 8-, 16-, and continuous-word burst mode;(5)Multi-Level Cell Technology: Highest Density at Lowest Cost;(6)Asymmetrically-blocked architecture;(7)Four 32-KByte parameter blocks: top or bottom configuration;(8)128-KByte main blocks;(9)Standby current: 55 A (Typ) for 256-Mbit;(10)Common Flash Interface capable.

The absolute maximum ratings of the JS28F256P30TFA can be summarized as:(1)Temperature under bias: -40 °C to +85 °C;(2)Storage temperature:65 °C to +125 °C;(3)Voltage on any signal (except VCC, VPP):0.5 V to +4.1 V;(4)VPP voltage:0.2 V to +10 V;(5)VCC voltage:0.2 V to +2.5 V;(6)VCCQ voltage:0.2 V to +4.1 V;(7)Output short circuit current: 100 mA.

The electrical characteristics of the JS28F256P30TFA can be summarized as:(1)Input Load Current: ±2 A;(2)Output Leakage Current: ±10 A;(3)VPP Read: 2 A to 15 A;(4)VPP Program Current: 8 to 22 mA. If you want to know more information such as the electrical characteristics about the JS28F256P30TFA, please download the datasheet in www.seekic.com or www.chinaicmart.com .