JS28F640P30B85A

Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Interface: Parallel
Packaging: Tray
Memory Size: 64M (4M x 16)
Speed: 85ns
Manufacturer: Micron Technology Inc
Memory Type: FLASH - Nor
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Voltage - Supply: 1.7 V ~ 2 V
Series: StrataFlash™
Supplier Device Package: 56-TSOP (18.4x14)


Description

The JS28F640P30B85A is designed as one kind of Intel StrataFlash embedded memory device that has some points of benefits such as more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage.

Features of the JS28F640P30B85A are:(1)85/88 ns initial access;(2)40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode;(3)25 ns asynchronous-page read mode;(4)4-, 8-, 16-, and continuous-word burst mode;(5)1.8 V buffered programming at 7 s/byte (Typ);(6)Asymmetrically-blocked architecture;(7)128-KByte main blocks;(8)Minimum 100,000 erase cycles per block;(9)16-bit wide data bus;(10)Common Flash Interface capable.

The absolute maximum ratings of the JS28F640P30B85A can be summarized as:(1)Temperature under bias:40 °C to +85 °C;(2)Storage temperature: -65 °C to +125 °C;(3)Voltage on any signal (except VCC, VPP):0.5 V to +4.1 V;(4)VPP voltage:0.2 V to +10 V;(5)VCC voltage:0.2 V to +2.5 V;(6)VCCQ voltage:0.2 V to +4.1 V;(7)Output short circuit current: 100 mA. If you want to know more information about the JS28F640P30B85A, please download the datasheet in www.seekic.com or www.chinaicmart.com .