K1B6416B6C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the  evice. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions  onger than 1 second may affect reliability.

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data.

SAMSUNG's UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.

UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.

K1B6416B6C is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell.

The device supports the traditional SRAM like asynchronous bus operation(asynchronous page read and asynchronous write), the NOR flash like synchronous bus operation(synchronous burst read and asynchronous write) and the fully synchronous bus operation(synchronous burst read and synchronous burst write).

These three bus operation modes are defined through the mode register setting.

The device also supports the special features for the standby power saving. Those are the Partial Array Refresh(PAR) mode and internal Temperature Compensated Self Refresh(TCSR) mode.

The optimization of output driver strength is possible through the mode register setting to adjust for the different data loadings.

Through this driver strength optimization, the device can minimize the noise generated on the data bus during read operation.