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Part Number: K2075

 

 

 

 

Description: The K2075 id Silicon N-Channel MOS FET. It is suitable for high speed power switching.



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K2075 General Description


The K2075 id Silicon N-Channel MOS FET. It is suitable for high speed power switching.

The features of K2075 can be summarized as:(1)Low on-resistance; (2)High speed switching; (3)Low Drive Current; (4)No secondary breakdown; (5)Suitable for Switching regulator.

The absolute maximum ratings of K2075 can be summarized as:(1)Drain to source voltage:250 V; (2)Gate to source voltage:±30 V; (3)Drain current:20 A; (4)Drain peak current:80 A; (5)Body to drain diode reverse drain current:20 A; (6)Channel dissipation:100 W; (7)Channel temperature:150 °C; (8)Storage temperature:55°C to +150 °C.

If you want to know more information such as the electrical characteristics about the K2075, please download the datasheet in www.seekic.com or www.chinaicmart.com .

K2075 Connection Diagram

K2075  Connection Diagram

K2075 datasheet

K2000E70
PDF/DataSheet Download

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