Purchase K4F160811D, In-stock K4F160811D From SeekIC.
Part Number: K4F160811D
Description: This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed rand...
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K4F160811D
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DataSheet
General Description
K4F160811D General Description
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
K4F160811D Maximum Ratings
| Parameter | Symbol | Rating | Units | |
| 3.3V | 5V | |||
| Voltage on any pin relative to VSS | VIN,VOUT | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Voltage on VCC supply relative to VSS | VCC | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Storage Temperature | Tstg | -55 to +150 | -55 to +150 | °C |
| Power Dissipation | PD | 1 | 1 | W |
| Short Circuit Output Current | IOS Address | 50 | 50 | mA |
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
K4F160811D Features
• Part Identification
- K4F170811D-B(F) (5V, 4K Ref.)
- K4F160811D-B(F) (5V, 2K Ref.)
- K4F170812D-B(F) (3.3V, 4K Ref.)
- K4F160812D-B(F) (3.3V, 2K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
- K4F170811D-B(F) (5V, 4K Ref.)
- K4F160811D-B(F) (5V, 2K Ref.)
- K4F170812D-B(F) (3.3V, 4K Ref.)
- K4F160812D-B(F) (3.3V, 2K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
K4F160811D Connection Diagram
K4F160811D
PDF/DataSheet Download
- Datasheet: K4F160811D
- File Size: 231866 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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K4F160811D Relative Products
K4F160412D
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160412D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F160412C
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160412C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F160411D
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160411D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F160411C
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160411C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F151612D
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs K4F151612D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -6...
K4F151611D
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs K4F151611D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -6...
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