Purchase K4F171611D, In-stock K4F171611D From SeekIC.
Part Number: K4F171611D
Description: This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed ran...
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K4F171611D
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DataSheet
General Description
K4F171611D General Description
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh,RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
K4F171611D Maximum Ratings
| Parameter | Symbol | Rating | Units | |
| 3.3V | 5V | |||
| Voltage on any pin relative to VSS | VIN,VOUT | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Voltage on VCC supply relative to VSS | VCC | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Storage Temperature | Tstg | -55 to +150 | -55 to +150 | °C |
| Power Dissipation | PD | 1 | 1 | W |
| Short Circuit Output Current | IOS Address | 50 | 50 | mA |
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
K4F171611D Features
• Part Identification
- K4F171611D-J(T) (5V, 4K Ref.)
- K4F151611D-J(T) (5V, 1K Ref.)
- K4F171612D-J(T) (3.3V, 4K Ref.)
- K4F151612D-J(T) (3.3V, 1K Ref.)
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
- K4F171611D-J(T) (5V, 4K Ref.)
- K4F151611D-J(T) (5V, 1K Ref.)
- K4F171612D-J(T) (3.3V, 4K Ref.)
- K4F151612D-J(T) (3.3V, 1K Ref.)
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
K4F171611D Connection Diagram
K4F171611D
PDF/DataSheet Download
- Datasheet: K4F171611D
- File Size: 541679 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4F151611
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- 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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- ·K4F160411C-B
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- 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
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- ·K4F160411C-F
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- ·K4F160411D
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- 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
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- ·K4F160412C
- SAMSUNG [Samsung semiconductor]
- 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
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K4F171611D Relative Products
K4F170812D
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F170812D . Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -6...
K4F170811D
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F170811D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F170412D
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170412D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F170412C
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170412C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
K4F170411D
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170411D . Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -6...
K4F170411C
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170411C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60...
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