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K4H510438B-G(Z)C/LB3

Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operationR...

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SeekIC No. : 004382772 Detail

K4H510438B-G(Z)C/LB3: Features: • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400• Double-data-rate architecture; two data transfers per clock cycle&#...

K4H510438B-G(Z)C/LB3 Data Sheet

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Part Number:
K4H510438B-G(Z)C/LB3
Supply Ability:
5000

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  • 15 Days
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Upload time: 2024/4/27

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Product Details

Description



Features:

• VDD : 2.5V ± 0.2V, VDDQ :  2.5V ± 0.2V for DDR333
• VDD : 2.6V ± 0.1V, VDDQ :  2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8)  &  [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns  DQ and DQS transition with CK transition
• MRS cycle with address key programs
  -. Read latency : DDR333(2.5 Clock), DDR400(3 Clock)    
  -. Burst length (2, 4, 8)
  -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 60Ball FBGA (Leaded & Pb-Free(RoHS compliant)) package


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1.5 W
Short circuit current IOS 50 mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. Syn-chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
            




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