K4M64163PH-R(B)G/F

Features: • 1.8V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & 3).-. Burst length (1, 2, 4, 8 & Full page).-. Burst type (Sequential & Interleave).• EMRS cycle ...

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K4M64163PH-R(B)G/F Picture
SeekIC No. : 004382830 Detail

K4M64163PH-R(B)G/F: Features: • 1.8V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & 3).-. Burst...

floor Price/Ceiling Price

Part Number:
K4M64163PH-R(B)G/F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls CSP with 0.8mm ball pitch( -RXXX -Pb, -BXXX -Pb Free).




Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD ,VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.0  W
Short circuit current IOS 50 mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNGs high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock, and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




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