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K4N26323AE-GC

Features: • 2.5V + 0.1V power supply for device operation• 1.8V + 0.1V power supply for I/O interface• On-Die Termination for all inputs except CKE,ZQ• Output Driver Strength adjustment by EMRS• SSTL_18 compatible inputs/outputs• 4 banks operation• MRS cyc...

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SeekIC No. : 004382835 Detail

K4N26323AE-GC: Features: • 2.5V + 0.1V power supply for device operation• 1.8V + 0.1V power supply for I/O interface• On-Die Termination for all inputs except CKE,ZQ• Output Driver Strength...

K4N26323AE-GC Data Sheet

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Part Number:
K4N26323AE-GC
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 2.5V + 0.1V power supply for device operation
• 1.8V + 0.1V power supply for I/O interface
• On-Die Termination for all inputs except CKE,ZQ
• Output Driver Strength adjustment by EMRS
• SSTL_18 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
- CAS latency : 5, 6, 7 (clock)
- Burst length : 4 only
- Burst type : sequential only
• Additive latency (AL): 0,1(clock)
• Read latency(RL) : CL+AL
• Write latency(WL) : AL+1
• Differential Data Strobes for Data-in, Date out ;
- 4 DQS and /DQS(one differential strobe per byte)
- Single Data Strobes by EMRS.
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)(16ms is under consideration)
• 144 Ball FBGA
• Maximum clock frequency up to 500MHz
• Maximum data rate up to 1Gbps/pin
• DLL for Address, CMD and outputs


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply relative to Vss VDD -1.0 ~ 3.6 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 4.5 W
Short circuit current IOS 50 mA

Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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