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K4N29A

Features: • Small Package Size• Collector-Emitter Voltage : Min.30V• Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V)• Electrical Isolation Voltage : AC2500Vrms• UL Recognized File No. E107486Application• Interface between two circuits of different pote...

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K4N29A: Features: • Small Package Size• Collector-Emitter Voltage : Min.30V• Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V)• Electrical Isolation Voltage : AC2500Vrms̶...

K4N29A Data Sheet

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Part Number:
K4N29A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small Package Size
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V)
• Electrical Isolation Voltage : AC2500Vrms
• UL Recognized File No. E107486


Application

• Interface between two circuits of different potential
• Telephone Line Receiver, CMOS Logic Interface
• Power Supply Regulators


Specifications

Parameter Symbol Rating Unit
Input Forward Current IF 80 mA
Reverse Voltage VR 5 V
Peak Forward Current *1 IFP 3 A
Power Dissipation PD 150 mW
Output Collector-Emitter Breakdown Voltage BVCEO 30 V
Emitter-Collector Breakdown Voltage BVCEO 5 V
Collector-Base Breakdown Voltage BVCEO 30 V
Collector Current IC 100 mA
Collector Power Dissipation PC 150 mW
Input to Output Isolation Voltage*2 Viso AC2500 Vrms
Storage Temperature Tstg -55~+125
Operating Temperature Topr -30~+100
Lead Soldering Temperature*3 Tsol 260
Total Power Dissipation Ptot 250 mW

*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec




Description

These Photocouplers K4N29A cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.




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