K4N56163QF-GC

• 1.8V + 0.1V power supply for device operation
• 1.8V + 0.1V power supply for I/O interface
• 4 Banks operation
• Posted CAS
• Programmable CAS Letency : 4, 5, 6 and 7
• Programmable Additive Latency : 0, 1, 2, 3, 4 and 5
• Write Latency (WL) = Read Latency (RL) -1
• Burst Legth : 4 and 8 (Interleave/nibble sequential)
• Programmable Sequential/ Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-chip Driver (OCD) Impedance Adjustment
• On Die Termination
• Refresh and Self Refresh Average Refesh Period 7.8us at lower then TCASE 85×C,3.9us at 85×C < TCASE < 95 ×C
• 84 ball FBGA

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

The 256Mb gDDR2 SDRAM chip K4N56163QF-GC is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device K4N56163QF-GC achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip K4N56163QF-GC is designed to comply with the following key gDDR2 SDRAM features such as posted CAS with additive latency,write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs arelatched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. A thirteen bit address bus is used to convey row, column,and bank address information in a RAS/CAS multiplexing style. For example, 256Mb(x16) device receive 13/9/2 addressing.The 256Mb gDDR2 devices operate with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.The 256Mb gDDR2 devices are available in 84ball FBGAs(x16).