K4S511533F - Y(P)L

Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & 3).-. Burst length (1, 2, 4, 8 & Full page).-. Burst type (Sequential & Interleave).• ...

product image

K4S511533F - Y(P)L Picture
SeekIC No. : 004382912 Detail

K4S511533F - Y(P)L: Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & ...

floor Price/Ceiling Price

Part Number:
K4S511533F - Y(P)L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 2 /CS Support.
• 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
mA



Description

The K4S511533F - Y(P)L is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Semiconductor Modules
Resistors
Potentiometers, Variable Resistors
Power Supplies - Board Mount
Computers, Office - Components, Accessories
View more