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K4S511632C

Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-. Burst length (1, 2, 4, 8 & Full page)-. Burst type (Sequential & Interleave)• All inp...

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SeekIC No. : 004382915 Detail

K4S511632C: Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-....

K4S511632C Data Sheet

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Part Number:
K4S511632C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 2 W
Short circuit current IOS 50 mA



Description

The K4S511632C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

 




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