Purchase K4S560432E-NC, In-stock K4S560432E-NC From SeekIC.
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K4S560432E-NC
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Suppliers
DataSheet
General Description
K4S560432E-NC Maximum Ratings
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to VSS | VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD supply relative to Vss | VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Storage temperature | TSTG |
-55 ~ +150 |
|
| Power dissipation | PD |
1 |
W |
| Short circuit current | IOS |
50 |
mA |
K4S560432E-NC Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8)
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8)
• Auto & self refresh
• 64ms refresh period (8K Cycle)
K4S560432E-NC Connection Diagram
K4S560432E-NC
PDF/DataSheet Download
- Datasheet: K4S560432E-NC
- File Size: 187187 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K4S160822D
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F10
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S160822DT-G/FL
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
- 1211444 KB
- ·K4S161622D
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
- ·K4S161622D-TC/L10
- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S560432E-NC Relative Products
K4S560432E
The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cyc...
K4S560432D
The K4S560432D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560432B
The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S560432A
The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O...
K4S51323PF-MF
The K4S51323PF-MF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock ...
K4S51323PF-EF
The K4S51323PF-EF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock ...
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